SSTPAD5 SOT-23 3L ROHS 数据手册
PAD SERIES
PICO AMPERE DIODES
FEATURES
DIRECT REPLACEMENT FOR SILICONIX PAD SERIES
REVERSE BREAKDOWN VOLTAGE
BVR ≥ -30V
REVERSE CAPACITANCE
Crss ≤ 2.0pF
PAD1,2,5
PAD50
JPAD
SSTPAD
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to +150 °C
Operating Junction Temperature
-55 to +150 °C
Maximum Power Dissipation
SOT-23
TOP VIEW
Continuous Power Dissipation (PAD)
300mW
Continuous Power Dissipation (J/SSTPAD)
350mW
C
K
1
K
C
2
3
A
Maximum Currents
Forward Current (PAD)
50mA
Forward Current (J/SSTPAD)
10mA
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
BVR
Reverse Breakdown
Voltage
VF
MIN
ALL PAD
-45
ALL SSTPAD
-30
ALL JPAD
-35
Forward Voltage
Crss
Total Reverse Capacitance
TYP
MAX UNITS
IR = -1µA
V
0.8
1.5
PAD1,5
0.5
0.8
All Others
1.5
2
CONDITIONS
IF = 5mA
pF
VR = -5V, f = 1MHz
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
IR
1.
2.
CHARACTERISTIC
Maximum Reverse
Leakage Current
PAD
PAD1
-1
JPAD
SSTPAD
PAD2
-2
(SST/J)PAD5
-5
-5
-5
(SST/J)PAD10
-10
-10
-10
(SST/J)PAD20
-20
-20
-20
(SST/J)PAD50
-50
-50
-50
(SST/J)PAD100
-100
-100
(SST/J)PAD200
-200
(SST/J)PAD500
-500
UNITS
pA
CONDITIONS
VR = -20V
Derate 2mW/°C above 25°C
Derate 2.8mW/°C above 25°C
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201142 03/03/2020 Rev#A7 ECN# PAD SERIES
Figure 1. Operational Amplifier Protection
Input Differential Voltage limited to 0.8V (typ) by JPADs D1 and D2. Common
Mode Input voltage limited by JPADs D3 and D4 to ±15V.
Figure 2. Sample and Hold Circuit
Typical Sample and Hold circuit with clipping. JPAD diodes reduce offset
voltages fed capacitively from the JFET switch gate.
FIGURE 2
FIGURE 1
+V
D2
OP-27
D2
2N4117A
+
D3
+V
JPAD5
D1
JPAD20
D1
-V
ein
D4
CONTROL
SIGNAL
2N4393
C
VOUT
R
+15V -15V
SOT-23
TO-72
Three Lead
0.89
1.03
0.37
0.51
1
1.78
2.05
2.80
3.04
3
2
1.20
1.40
2.10
2.64
0.89
1.12
0.085
0.180
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
2.
The PAD type number denotes its maximum reverse current value in pico amperes. Devices with IR values intermediate to those shown
are available upon request.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201142 03/03/2020 Rev#A7 ECN# PAD SERIES
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